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| TPR 500A 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input prematch for broadband capaility. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55KT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 1750 Watts 55 Volts 3.5 Volts 40 Amps - 65 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg c VSWR BVebo BVces hFE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1090 MHz Vcc = 50 Volts PW = 10 sec DF = 1% F = 1090 MHz MIN 500 150 5.2 35 10:1 TYP MAX UNITS Watts Watts dB % jc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance Ie = 30 mA Ic = 30 mA Ic = 500 mA, Vce = 5 V 3.5 55 10 0.1 Volts Volts o C/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Rev A June, 1994 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. |
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